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71V35761S200BG

  •  71V35761S200BG
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71V35761S200BG
记忆
IDT, Integrated Device Technology Inc
IC SRAM 4.5MBIT
-
托盘
270
: 270

84

$3.6100

$303.2400

获取报价信息
71V35761S200BGI8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGG
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BG8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGI
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGGI8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGGI
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGG8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BG
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
IDT71V35761S200BQI
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQ8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQGI
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQI8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQ
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQG
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQG8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQGI8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
产品参数
PDF(1)
类型描述
制造商IDT, Integrated Device Technology Inc
系列-
包装托盘
产品状态OBSOLETE
包装/箱119-BGA
安装类型Surface Mount
内存大小4.5Mbit
内存类型Volatile
工作温度0°C ~ 70°C (TA)
电压 - 电源3.135V ~ 3.465V
技术SRAM - Synchronous, SDR
时钟频率200 MHz
内存格式SRAM
供应商设备包119-PBGA (14x22)
内存接口Parallel
存取时间3.1 ns
记忆组织128K x 36
DigiKey 可编程Not Verified
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