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SSM6N48FU,LF

  •  SSM6N48FU,LF
  • image of FET、MOSFET 阵列 SSM6N48FU,LF
SSM6N48FU,LF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30
-
卷带式 (TR)
2850
1
: 2850

1

$0.4300

$0.4300

10

$0.3000

$3.0000

100

$0.1500

$15.0000

500

$0.1300

$65.0000

1000

$0.0900

$90.0000

3000

$0.0800

$240.0000

6000

$0.0700

$420.0000

9000

$0.0600

$540.0000

30000

$0.0600

$1,800.0000

75000

$0.0500

$3,750.0000

150000

$0.0500

$7,500.0000

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产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列U-MOSIII
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-TSSOP, SC-88, SOT-363
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度150°C
技术MOSFET (Metal Oxide)
功率 - 最大300mW
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C100mA (Ta)
输入电容 (Ciss)(最大值)@Vds15.1pF @ 3V
Rds On(最大)@Id、Vgs3.2Ohm @ 10mA, 4V
Vgs(th)(最大值)@Id1.5V @ 100µA
供应商设备包US6
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