CGD65A130S2-T13 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED_ Independent Distributor

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CGD65A130S2-T13


：	CGD65A130S2-T13
：	Single FETs, MOSFETs
：	Cambridge GaN Devices
：	650V GAN HEMT,
：	-
：	Tape & Reel (TR)
：	3452
：	1

: 3452

1

$6.2500

$6.2500

10

$5.3600

$53.6000

100

$4.4600

$446.0000

500

$3.9400

$1,970.0000

1000

$3.5500

$3,550.0000

3500

$3.3200

$11,620.0000

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Product parameters

TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	16-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Rds On (Max) @ Id, Vgs	182mOhm @ 900mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 4.2mA
Supplier Device Package	16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	12V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 12 V

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