CGD65B130S2-T13 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 4985

$6.4200

$5.3900

$53.9000

100

$4.3600

$436.0000

500

$3.8800

$1,940.0000

1000

$3.3200

$3,320.0000

2000

$3.1300

$6,260.0000

5000

$3.0000

$15,000.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Rds On (Max) @ Id, Vgs	182mOhm @ 900mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 4.2mA
Supplier Device Package	8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)	9V, 20V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 12 V

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