CGD65B200S2-T13 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 4455

$4.5500

$3.8200

$38.2000

100

$3.0900

$309.0000

500

$2.7500

$1,375.0000

1000

$2.3500

$2,350.0000

2000

$2.2100

$4,420.0000

5000

$2.1300

$10,650.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Rds On (Max) @ Id, Vgs	280mOhm @ 600mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 2.75mA
Supplier Device Package	8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)	9V, 20V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 12 V

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