EPC2108 FET, MOSFET Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 1073

$1.7600

$1.4600

$14.6000

100

$1.1600

$116.0000

500

$0.9800

$490.0000

2500

$0.7900

$1,975.0000

5000

$0.7600

$3,800.0000

12500

$0.7400

$9,250.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	EPC
Series	eGaN®
Package	Tape & Reel (TR)
Product Status	OBSOLETE
Package / Case	9-VFBGA
Mounting Type	Surface Mount
Configuration	3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	60V, 100V
Current - Continuous Drain (Id) @ 25°C	1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds	22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs	190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs	0.22nC @ 5V, 0.044nC @ 5V
Vgs(th) (Max) @ Id	2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package	9-BGA (1.35x1.35)

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