FBG20N18BSH Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED_ Independent Distributor

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FBG20N18BSH


：	FBG20N18BSH
：	Single FETs, MOSFETs
：	EPC Space
：	GAN FET HEMT 20
：	-
：	Bulk
：	151
：

: 151

1

$392.7500

$392.7500

10

$377.9900

$3,779.9000

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Product parameters

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TYPE	DESCRIPTION
Mfr	EPC Space
Series	e-GaN®
Package	Bulk
Product Status	ACTIVE
Package / Case	4-SMD, No Lead
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Rds On (Max) @ Id, Vgs	28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id	2.5V @ 3mA
Supplier Device Package	4-SMD
Drive Voltage (Max Rds On, Min Rds On)	5V
Vgs (Max)	+6V, -4V
Drain to Source Voltage (Vdss)	200 V
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 100 V

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