FBG30N04CC Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED_ Independent Distributor

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FBG30N04CC


：	FBG30N04CC
：	Single FETs, MOSFETs
：	EPC Space
：	GAN FET HEMT 30
：	-
：	Bulk
：	100
：

: 100

1

$318.0500

$318.0500

10

$297.8900

$2,978.9000

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Product parameters

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TYPE	DESCRIPTION
Mfr	EPC Space
Series	-
Package	Bulk
Product Status	ACTIVE
Package / Case	4-SMD, No Lead
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Rds On (Max) @ Id, Vgs	404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id	2.8V @ 600µA
Supplier Device Package	4-SMD
Drive Voltage (Max Rds On, Min Rds On)	5V
Vgs (Max)	+6V, -4V
Drain to Source Voltage (Vdss)	300 V
Gate Charge (Qg) (Max) @ Vgs	2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 150 V

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