G06NP06S2 FET, MOSFET Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 12060

$0.8300

$0.7200

$7.2000

100

$0.5000

$50.0000

500

$0.4200

$210.0000

1000

$0.3600

$360.0000

2000

$0.3200

$640.0000

4000

$0.3200

$1,280.0000

8000

$0.3000

$2,400.0000

12000

$0.2800

$3,360.0000

28000

$0.2800

$7,840.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-SOP
Mounting Type	Surface Mount
Configuration	N and P-Channel
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Tc), 2.5W (Tc)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs	35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package	8-SOIC (0.154", 3.90mm Width)

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