G12P10KE Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 1424

$0.6100

$0.5200

$5.2000

100

$0.3600

$36.0000

500

$0.2800

$140.0000

1000

$0.2300

$230.0000

2500

$0.2000

$500.0000

5000

$0.1900

$950.0000

12500

$0.1800

$2,250.0000

25000

$0.1800

$4,500.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 10V
Power Dissipation (Max)	57W (Tc)
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1720 pF @ 50 V

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