G230P06F Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 4100

1000

$0.3700

$370.0000

5000

$0.3600

$1,800.0000

15000

$0.3400

$5,100.0000

30000

$0.3100

$9,300.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-220-3 Full Pack
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Rds On (Max) @ Id, Vgs	23mOhm @ -10A,- 10V
Power Dissipation (Max)	67.57W (Tc)
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220F
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4669 pF @ -30 V

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