G35N02K Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 317

$0.4300

$0.3700

$3.7000

100

$0.2600

$26.0000

500

$0.2000

$100.0000

1000

$0.1600

$160.0000

2500

$0.1500

$375.0000

5000

$0.1400

$700.0000

12500

$0.1300

$1,625.0000

25000

$0.1300

$3,250.0000

62500

$0.1200

$7,500.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Rds On (Max) @ Id, Vgs	13mOhm @ 20A, 4.5V
Power Dissipation (Max)	40W (Tc)
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	TO-252
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Vgs (Max)	±12V
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1380 pF @ 10 V

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