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MMBT4401

  •  MMBT4401
  • image of Single Bipolar Transistors MMBT4401
MMBT4401
Single Bipolar Transistors
Anbon Semiconductor
GENERAL PURPOSE
-
Tape & Reel (TR)
127056
1
: 127056

1

$0.1200

$0.1200

10

$0.0800

$0.8000

100

$0.0400

$4.0000

500

$0.0300

$15.0000

1000

$0.0200

$20.0000

3000

$0.0200

$60.0000

6000

$0.0200

$120.0000

9000

$0.0200

$180.0000

30000

$0.0100

$300.0000

75000

$0.0100

$750.0000

150000

$0.0100

$1,500.0000

Obtain quotation information
MMBT4401
华轩阳-HXY MOSFET
晶体管
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NPN 双极晶体管
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强茂-Panjit
通用型双极晶体管
MMBT4401W
创基-CBI
NPN小信号三极管
MMBT4401-AQ
德欧泰克-Diotec
Bipolar Transistors
MMBT4403Q
扬杰-YJ
小信号三极管
MMBT4403HE3
美微科-MCC
Small Signal Bipolar Transistors
MMBT4403U
创基-CBI
PNP小信号三极管
MMBT4401U
创基-CBI
NPN小信号三极管
MMBT4401-Q
德欧泰克-Diotec
Bipolar Transistors
MMBT4403-Q
友顺-UTC
Bipolar Transistor
MMBT4403-AQ
德欧泰克-Diotec
Bipolar Transistors
MMBT4401HE3
美微科-MCC
Small Signal Bipolar Transistors
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 1V
Frequency - Transition250MHz
Supplier Device PackageSOT-23-3L
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max350 mW
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