SIHP155N60EF-GE3 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 2100

$3.6300

$3.0500

$30.5000

100

$2.4600

$246.0000

500

$2.1900

$1,095.0000

1000

$1.8700

$1,870.0000

2000

$1.7700

$3,540.0000

5000

$1.6900

$8,450.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Vishay / Siliconix
Series	EF
Package	Tube
Product Status	ACTIVE
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Rds On (Max) @ Id, Vgs	155mOhm @ 10A, 10V
Power Dissipation (Max)	179W (Tc)
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220AB
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1465 pF @ 100 V

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