TP65H070LSG Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

Product parameters

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TYPE	DESCRIPTION
Mfr	Transphorm
Series	TP65H070L
Package	Tube
Product Status	DISCONTINUED
Package / Case	3-PowerDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Cascode Gallium Nitride FET)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Rds On (Max) @ Id, Vgs	85mOhm @ 16A, 10V
Power Dissipation (Max)	96W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 700µA
Supplier Device Package	3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 400 V

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