TP65H150G4LSG Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 2934

$5.0600

$4.5400

$45.4000

100

$3.7200

$372.0000

500

$3.1700

$1,585.0000

1000

$2.6700

$2,670.0000

3000

$2.3500

$7,050.0000

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Product parameters

TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	3-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Power Dissipation (Max)	52W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 500µA
Supplier Device Package	3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V

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